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| MITSUBISHI RF POWER MODULE M68745H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO OUTLINE DRAWING 45 42 2-R1.5 Dimensions in mm BLOCK DIAGRAM 2 3 1 4 5 5 18 (36.5) 5 8.5 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN 35 1.5 6.4 32.2 1.5 H50 ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50 f=896-941MHz, ZG=ZL=50 f=896-941MHz, ZG=ZL=50 f=896-941MHz, ZG=ZL=50 Ratings 9 5.5 6 6 -30 to +100 -40 to +100 Unit V V mW W C C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25C, ZG=ZL=50 unless otherwise noted) Symbol f PO 2fO in T Frequency range Output power 2nd. harmonic Input VSWR Total efficiency Stability Load VSWR tolerance Parameter Test conditions Limits Min 896 3.8 Max 941 -30 4 30 No parasitic oscillation No degradation or destroy Unit MHz W dBc VDD=7.2V, VGG=5V, Pin=1mW, ZG=ZL=50 PO=3.8W(VGG=Adjust), VDD=7.2V, Pin=1mW, ZG=ZL=50 ZG=ZL=50, VDD=5-9.3V, Load VSWR <4:1 VDD=9V, Pin=1mW, PO=3.8W (VGG Adjust), ZL=20:1 % Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. 97 MITSUBISHI RF POWER MODULE M68745H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 VDD=7.2V 1.0 VGG=5V 0.5 Pin=1mW ZG=ZL=50 0.0 840 860 880 in T PO 50 45 40 35 30 25 20 15 10 5 900 920 940 0 960 0.1 -25 1.0 -20 -15 -10 -5 0 5 INPUT POWER Pin (dBm) 1 10.0 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 10 100.00 f=896MHz PO VDD=7.2V VGG=5V ZG=ZL=50 T FREQUENCY f (MHz) OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 10 f=941MHz VDD=7.2V VGG=5V ZG=ZL=50 PO T 100.00 OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 5.0 50 f=896MHz PO 4.5 45 VDD=7.2V 4.0 Pin=1mW 40 ZG=ZL=50 T 3.5 35 3.0 30 25 20 15 10 5 3.0 3.5 4.0 4.5 0 5.0 1 10.0 2.5 2.0 1.5 1.0 0.5 0.1 -25 1.0 -20 -15 -10 -5 0 5 INPUT POWER Pin (dBm) 0.0 2.5 GATE SUPPLY VOLTAGE VGG (V) OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 2.5 3.0 3.5 4.0 f=941MHz VDD=7.2V Pin=1mW ZG=ZL=50 4.5 T PO 50 45 40 35 30 25 20 15 10 5 0 5.0 2 0 6 4 10 8 14 12 OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 70 f=896MHz VGG=5V Pin=1mW ZG=ZL=50 PO 60 50 T 40 30 20 10 0 14 0 2 4 6 8 10 12 GATE SUPPLY VOLTAGE VGG (V) DRAIN SUPPLY VOLTAGE VDD (V) Nov. 97 MITSUBISHI RF POWER MODULE M68745H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 70 f=941MHz 12 VGG=5V 60 Pin=1mW PO 10 ZG=ZL=50 50 8 6 4 2 0 0 2 4 6 8 10 12 T 40 30 20 10 0 14 DRAIN SUPPLY VOLTAGE VDD (V) Nov. 97 |
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